smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features high breakdown voltage v ceo =300v small cob c ob = 1.5 pf typ. 2SC4702 absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 300 v collector-emitter voltage v ceo 300 v emitter-base voltage v ebo 5v collector current i c 100 ma collector dissipation p c 150 mw junction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c = 10a , i e = 0 300 v collector-emitter breakdown voltage v (br)ceo i c =1ma,r be = 300 v emitter-base breakdown voltage v (br)ebo i e = 10a , i c =0 5 v collector cutoff current i cbo v cb = 250v, i e =0 0.1 a collector-emitter saturation voltage v ce(sat) i c = 30ma , i b =3ma 0.5 v dc current gain h fe v ce =6v,i c = 2ma 60 150 gain bandwidth product f t v ce =6v,i c =5ma 80 mhz collector output capacitance cob v cb = 10v , i e =0, f = 1mhz 1.5 pf marking marking xv- smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type smd type smd type smd type product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
|
